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In this paper, we present a monolithic vertical integration of a 850nm wavelength AlGaAs/GaAs-based vertical-cavity surface-emitting laser (VCSEL) and a 810nm wavelength AlGaAs/GaAs-based resonant cavity enhanced photodetector(RCE-PD). The receiving and transmitting of optical signals on two different wavelengths can be realized simultaneously by the single transceiving chip. Simulations show that,...
In this paper, an integrated optoelectronic chip, which can transmit optical signal at 849.2nm and receive optical signal at 803nm, is proposed. It is constructed by integrating a VCSEL unit above a PIN-PD unit. Analysis show that, the VCSEL unit has a threshold current around 1mA and a maximum output power around 1.2mW at 849.2nm, the PIN-PD unit has a highest absorption quantum efficiency above...
This paper investigates the influence of the GaAs substrate on the transmission performance of quarter-wave-stacks' Distributed Brag Reflector (DBR)-based Fabry-Pérot (F-P) filter formed by heteroepitaxial growth, using Transfer Matrix Method (TMM) theoretically. According to our simulation, the designed resonant transmission peak of the filter deteriorates by splitting up with the substrate thickness...
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