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We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily...
Vertical p-type Gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In high II/III ratio range (II/II>;9.1%), there exists a critical length, beyond which the kinking takes place. Two possible...
GaAs nanowires were grown by the metal organic chemical vapor deposition on the GaAs(111)B substrates via Vapor-Liquid-Solid mechanism with various Au film thickness. Experiment results indicated that thicker Au film results in larger diameters, more dispersed size distribution, and lower density of the nanowires. All NWs are straight from base to top, and no lateral growth occurs. The growth rate...
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