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Boron-containing GaAsSb/GaAs quantum wells (QWs) with different antimony (Sb) mole fractions were grown by low-pressure metal–organic chemical vapor deposition for the first time. The effects of boron incorporation on the performance of GaAsSb/GaAs QWs are discussed. For samples with low compressive strain, injection of triethylboron can enhance the Sb content and increase the compressive strain,...
Using first-principles calculations in the generalized gradient approximation (GGA), the fundamental properties of BxIn1-xP alloys are investigated. The composition dependence of the lattice constant has been estimated from total energy calculations. By calculated the total density of states (DOS) of the relaxed B0.25In0.75P alloy, the effects of alloying boron on the electronic states of BxIn1-xP...
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