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High quality zinc-blende B x Ga 1−x As, B x Al 1−x As, B x Ga 1−x−y In y As and relevant MQW structures containing 10-period BGaAs/GaAs and BGaInAs/GaAs have been successfully grown on exactly-oriented (001)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium,...
Zinc-blende B x Ga 1−x As alloys have been successfully grown on exactly oriented (001)GaAs substrates using triethylboron, trimethylgallium and arsine sources. The growth has been accomplished in a vertical low-pressure metalorganic chemical vapor deposition (LP-MOCVD) reactor. Boron incorporation behaviors have been extensively studied as a function of growth temperature and...
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