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Advancement in semiconductor technologies including CMOS and SiGe is enabling the commercialisation of devices that have increased switching speed, reduced power supply and increased circuit complexity. Proliferation of high-speed systems in both digital and mixed-signal applications is also driving the need for advanced noise suppression techniques. This paper describes a novel approach of using...
We propose a novel electromagnetic bandgap (EBG) structure with a significantly extended noise isolation bandwidth, called a double-stacked EBG (DS-EBG) structure, fabricated on a low-temperature co-fired ceramic (LTCC) multilayer substrate. The DS-EBG structure was devised for wideband suppression of simultaneous switching noise (SSN) coupling in system-in-package (SiP) applications. Our design approach...
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