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A facile and scalable co‐segregation method is used to grow hexagonal boron nitride (h‐BN) thin films from B‐ and N‐containing metals. By annealing the sandwiched metal substrates in vacuum, sub‐monolayer h‐BN flakes, monolayer h‐BN films, and multilayer h‐BN thin films of varying thickness are successfully prepared. This approach follows an underneath‐growth mode and exhibits good thickness‐ and...
A facile strategy to grow nitrogen‐doped graphene using embedded nitrogen and carbon in metal substrate via a segregation method is reported. As doping is concurrently carried out in the segregation process of the carbon species, N atoms can be substitutionally doped into the graphene lattice. This approach allows precise control of the doping degree and location, which enables growing various heterojunctions...
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