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An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1–10.6 GHz simulation results. The proposed design has consumed 18mW. The...
An ultra-wideband low noise amplifier employs shunt resistive feedback is presented. LNA chip area has been reduced significantly using active inductor load. The LNA is designed and fabricated in the standard 0.18μm CMOS technology. The UWB LNA exhibit a measured gain of 12.5 to 13dB, and a noise figure of 3.8 dB over 1-5 GHz frequencies. S11 is less than -8dB within the entire band of frequencies...
An ultra-wide band low noise amplifier (LNA) is proposed. An UWB LNA from 3-7 GHz has been designed exploiting the wide band input matching of common gate and the high gain of cascode amplifier. The LNA has been fabricated in the standard 0.18μm CMOS process. The measured gain is 11.5dB from 3 GHz to 7 GHz, and noise figure is 3.5 dB. The measured input and output return loss is less than -11 dB of...
This paper presents a comparison between bipolar and NMOS transistor to get high linearity amplifier. Using bipolar transistor, the amplifier has high linearity, and it does not sensitive to component variations. High linear amplifier using bipolar transistor has been designed and was fabricated using TSMC 0.18 um CMOS 1P6M process. The high linearity amplifier exhibits measurements results as 10...
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