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High third-order intercept output point (OIP3) RF amplifier, suitable for cheap semiconductor technology is proposed. The circuit functionality simulated using Agilent ADS and parasitic components were taken into account using Assura RCX chip design software. Chip has designed for TSMC 0.35-um BiCMOS process. An OIP3 over +30 dBm was achieved with a gain of 8 dB, noise figure 5 dB, and a power consumption...
A voltage-controlled oscillator (VCO) employing on-chip coplanar waveguide (CPW) resonator is proposed for 2.4GHz wireless applications and comparative study between the proposed VCO and a conventional VCO which is composed of LC-tank resonator (LC-VCO), is carried out. By comparing the measured results on the fabricated chip on TSMC 0.35 mum BiCMOS technology, it has noted that the VCO employing...
We designed a SiGe BiCMOS 5 GHz-band power amplifier (PA) by using the commercial electromagnetic (EM) and SPICE co-simulator. A new matching circuit composed of conductor-backed coplanar waveguide (CPW) meanderline resonator and impedance inverter is designed. Finally, we designed the 5 GHz PA with CPW matching circuit, spiral inductor, feed line and inductance of the bonding wires by using EM and...
Recently, spiral inductors have widely been used instead of resistors in the design of matching circuits to enhance the thermal noise performance of a wireless transceiver. However, such elements usually have low quality factor (Q) and may encounter the self-resonance in microwave-frequency band which permits its use in higher frequencies, and on the other hand, they occupy the large on-chip space...
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