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Single event transients generated in a large-area photodiode were compared using a variety of different pulsed laser systems. Differences in transient amplitudes and charge collection are attributed to the different laser characteristics.
Spatially-resolved picosecond laser induced transients have been measured in a 0.18 mum CMOS inverter test structure as a function of temperature. Sensitive n-drain and p-drain nodes have been scaled in size to accommodate characteristic differences between ion and laser tracks. Images based on pulse characteristics have been collected from 325 K to 400 K and transient currents extracted from laser...
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