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The surface roughness of hydrogen silsesquioxane (HSQ) as a negative tone electron beam (EB) resist has been studied as a function of exposure dose, developer concentration, and pre-exposure bake temperature.In the range of low exposure doses, the surface roughness of HSQ drops rapidly with an increase in the dose. It levels off at about 1nm around the dose at which the respective contrast curve saturates...
An overview is presented of the theory and realisation of single electronics devices. First, the major ideas of the Orthodox theory, which was developed by Likharev, are presented and its extraordinary predictive value for single electron devices will be discussed. Then, a classification of the different types of single electron devices will be given together with a rating of their industrial potential...
Infrared detectors have been based on high temperature superconductors as bolometer resistors. To achieve low thermal mass and good thermal isolation of the bolometer device the concept of air-bridge mircrobolometers is introduced. Silicon micromachining technology is applied to prepare free-standing YBa 2 Cu 3 O 7 structures on silicon substrates. This paper describes the...
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