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A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks: 1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital interface, 4) Flexible packaging. The RF-MEMS switch technology is detailed by focusing on the contact model, especially in the down-state. Electromagnetic (EM) and lumped-element...
The latest developments in RF-MEMS technology have paved the way for achieving high performance systems. Integration of MEMS modules into a BiCMOS process using an embedded solution is appearing to be the most promising one to enable the realization of fully integrated smart systems. This work gives an overview on different RF-MEMS modules integrated to a 0.25µm SiGe BiCMOS process. Back-end-of-line...
Robustness and reliability of an embedded RF-MEMS switch are analyzed. Changes of key switch parameters, such as COFF, CON, and pull-in voltage, with the ambient temperature are investigated in the range of -30°C to 150°C. The biggest temperature effect, a decrease by a factor of 2 between -30°C and 150°C, is observed for COFF, while CON weakly increases...
Different MEMS process techniques have been integrated to 0.25 μm BiCMOS process. First developed technique is Back-End-Off-Line (BEOL) integration. This technique was developed using standard metallization layers of BiCMOS process with an additional MEMS process steps. An RFMEMS capacitive switch was realized using BEOL embedded MEMS module. Back-side substrate etch method was developed as second...
An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of 0.25 ??m BiCMOS process, has been characterized. First, a mechanical model based on Finite-Element-Method (FEM) was developed by taking the residual stress of the thin film membrane into account. The pull-in voltage and the capacitance values obtained with the mechanical model agree very well with the measured values...
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