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A new thermal imaging method that senses the change in Si index of refraction as a function of temperature to visualize temperature distributions of LSI circuits is described. The resolution is not limited by the heat radiation wavelength but by the sensing light source, which is usually around 1μm. The method further extends the application into the areas that require both high spatial and temporal...
In the through silicon via (TSV) structure for 3-dimentional integration (3DI), large thermal-mechanical stress acts in the BEOL layer caused by the mismatch in thermal expansion coefficient (CTE) of the TSV materials. The resulting high-stress region is thought to be the critical point for the initiation of the cracking or the de-lamination that affects the mechanical reliability. In this study,...
The fabrication of WOW (wafer-on-a-wafer) with MEMS technology has been developed. A wafer was thinned and stacked on a base wafer. After the TSVs were patterned on the thinned wafer, they were filled by Cu for interconnection. The wafers were bonded with benzocylcobutene (BCB, CYCLOTENETM) as an adhesive material. The BCB layer was also acted as a dielectric layer between top and bottom silicon wafers...
Silicon diaphragm pressure sensors have been fabricated on SOI structures to reduce the pressure sensitivity variation. The SOI structure, made by direct bonding two oxidised silicon wafer together, was used as an etch-stop layer during diaphragm formation and for controlling the diaphragm thickness. The pressure sensitivity variation can be controlled to within a standard deviation of +or-2.3% from...
A piezoresistive pressure sensor with multilayer SOI structures has been developed. First SOI layers were employed as an etch-stop layer. Double-heteroepitaxially grown second SOI layers were used as an electrically isolated strain gauge. This sensor has the advantages of high sensitivity and high temperature operation.<<ETX>>
The effect of the top insulator on the stability of a-Si thin-film transistors (TFTs) is shown. TFTs with different top insulators show different Delta Vth (threshold voltage shift), and this Delta Vth is proportional to the flat-band voltage shift of an MIS (metal insulator semiconductor) capacitor fabricated with the same insulator. Furthermore, Delta Vth depends on the size of the gate/drain overlap,...
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