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RF reliability is becoming an increasing concern for actual technology platforms. In this context, small signal equivalent circuit degradation under hot carrier stress is investigated. It is shown that some lumped elements such as the conductance, the transconductance, the gate-to-drain capacitance, and series resistances are degraded. The application of corrections based on physical phenomenon explains...
This paper presents high-Q and high-inductance-density on-chip inductors made on high resistivity (HR) substrate using STMicroelectronics LP 65 nm SOI CMOS technology with 6 copper metal layers. For the first time, on-chip inductor architectures dedicated to HR SOI CMOS technology are reported and benchmarked with current one used in standard RF CMOS technologies. According to the measurement results,...
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