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In [1] a new formulation for quantifying the linearizing baseband voltage signal, injected at the output bias port, to linearize a device behaviour was introduced. A key feature of this approach is that since it is formulated in the envelope domain the number of linearization coefficient required is independent of the envelope shape, complexity. This property is validated by performing baseband linearization...
This paper introduces the first formulation and approach that enables measurement based non-linear behavioral look-up table transistor models to be frequency scalable. The experimental results on a M/A-COM GaN HFET from 2 GHz to 8 GHz, support theoretical analysis that frequency domain behavioral models defined in the admittance domain have frequency scalable model coefficients. Load-pull results...
The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when...
Memory effects are complex phenomena that present major design problems in modern high-power microwave power amplifier (PA) design, having a large influence on the suitability of a PA to linearisation through pre-distortion. Presented are detailed modulated measurements that clearly show how baseband electrical memory, introduced by the baseband impedance presented to the device, is by far the most...
Memory effects are generally attributable to thermal, electrical, packaging and/ or surface effects. This behaviour in turn impacts overall linearity and importantly the suitability of a power amplifier (PA) to linearisation through pre-distortion. It is assumed that electrical memory introduced by the low-frequency baseband impedance environments associated with the power amplifier bias insertion...
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