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The future electronics will be flexible, bendable, and wearable device. The damages like thermal stress and warpage occurred generally during bonding process between flexible substrate and chip used Pb-free solder for wearable electronic device. Though the wearable electronic devices have been researched, there is few study on bonding technology and reliability of joint between chip with solder bump...
3D packaging technology has been studied actively due to requirement of high performance, high density, and multifunction on electronic devices. This study investigated formation and bonding process of ultra-fine Cu pillar bump on both sides of Si thin wafer for 3D IC. Thickness of the thin wafer was 100μm. The bumps for the interconnection were formed as Sn-3.5Ag cap bump on Cu pillar bump by electroplating...
Joint properties of Au stud bumps joined with Sn-3.5Ag solder by flip chip bonding were investigated. Au stud bumps were bonded on SOP (solder on pad) at bonding temperature of 260°C and 300°C for 10sec, respectively. Aging treatment was carried out at 150°C for 100 and 300 hrs. After flip chip bonding, intermetallic compounds (IMCs) of AuSn, AuSn2, and AuSn4 were formed at interface between Au stud...
Demand for high speed, high density, small size, and multifunctional electronic devices has driven the development of 3D integration. Cu pillar bumps have received great attentions in ultra fine pitch 3D packaging. In this study, Sn-3.5Ag and Sn-58Bi cap bumps were fabricated on Cu pillar for fine pitch bonding of 3D packaging. Sn-Ag and Sn-Bi cap bumps with eutectic composition were fabricated with...
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