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Photoluminescence (PL) from the Si ion-irradiated SiO 2 /Si/SiO 2 layers on Si substrate at room temperature has been studied to elucidate the origins of the blue and red luminescence. A luminescence band around 450 nm was observed from as-irradiated sample, which was found to be originated from the diamagnetic defect known as B 2 band generated by Si ion irradiation. The intensity...
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