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In this presentation, we apply our microscopic approach to the promising GaP-based dilute nitride Ga(NAsP) material system. This new material class may realize a monolithic integration of direct laser material on silicon wafer, thus merging photonic and microelectronic elements.
Quasicrystals based on the excitonic resonances of GaAs/AlGaAs quantum wells were grown with spacings that satisfy a Fibonacci sequence. Linear and nonlinear reflectivity and photoluminescence measurements were performed, agreeing quite well with theory.
In this work, a highly strained InGaAs/GaAs VECSEL which can cover a longer wavelength range of 1150 nm to 1190 nm is developed. This laser has a robust multi-Watt power performance. Using intracavity frequency doubling, high-power coherent light is demonstrated in a wide yellow-orange band (575~595 nm).
Summary form only given. The optical response of nanostructured semiconductors around the bandgap is dominated by the properties of excitons in interface potentials fluctuating: on a mesoscopic length scale. On this length scale, scanning near-field optical microscopy (SNOM) extents the optical resolution to a fraction of the wavelength of light. The results of a finite difference time domain evaluation...
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