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The ultrafast carrier dynamics of Ge/SiGe quantum wells on Si substrate is investigated by pump‐probe spectroscopy. Spectrally tunable 80 fs pulses emitted by an opto‐parametric amplifier are used to excite the sample and a white‐light supercontinuum generated from a 1 kHz Ti:sapphire regenerative amplifier system is used to probe the sample transmission.
Pronounced nonequilibrium effects are observed...
The influence of the Mg concentration and lattice temperature on the carrier recombination dynamics in Zn 1−x Mg x O alloys has been studied by time-resolved photoluminescence for different emission and excitation energies. Carrier localization effects are found to play a significant role, becoming increasingly important for lower temperatures and higher Mg concentrations. Emission...
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