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In this contribution we are analyzing the properties of a gain structure based on seventeen 10 nm wide Al-GalnAs QW designed for operation in the 850 nm range. Optically pumped semiconductor lasers are usually pumped via barrier states from which the generated carriers are relaxing into the quantum well (QW) states. Pumping directly in-well states seems to be an attractive alternative in some situations...
In this work, a highly strained InGaAs/GaAs VECSEL which can cover a longer wavelength range of 1150 nm to 1190 nm is developed. This laser has a robust multi-Watt power performance. Using intracavity frequency doubling, high-power coherent light is demonstrated in a wide yellow-orange band (575~595 nm).
We report on the development of a high-power tunable yellow-orange laser. It is based on intracavity frequency doubling of a widely tunable, highly strained InGaAs-GaAs vertical-external-cavity surface-emitting laser operating near 1175 nm. Over 5 W of continuous-wave output power is achieved and is tunable over a 15-nm band centered at 587 nm. This compact low-cost high-power yellow-orange laser...
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