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The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double-Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel.
A closed form expression for the effective conduction path parameter of subthreshold conduction is presented for dual gate metal oxide semiconductor field effect transistor (DG MOSFET). Based on the effective conduction path an analytical expression of subthreshold swing is obtained.
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