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We study the nonlinear ultrafast carrier dynamics in highly n-doped In0.53Ga0.47As using terahertz (THz) time-domain spectroscopy (THz-TDS). In addition to the bleaching effect, we further observe significant THz waveform modulations and high frequency generations.
We present optical pump / high-power THz probe measurements for undoped silicon at different optical pump fluences. We observe an absorption bleaching of intense terahertz (THz) pulses, which decreases with increasing optical pump fluence.
The nonlinear interaction of intense few-cycle terahertz pulses with free carriers in semiconductors is studied in both n-doped and photoexcited systems. Intervalley scattering is found to cause ultrafast modulation and bleaching of the terahertz absorption.
We have performed open-aperture Z-scan measurements on n-doped InGaAs using intense few-cycle terahertz pulses. We observe a significant bleaching of the terahertz pulse absorption attributed to terahertz-electric-field-induced intervalley carrier scattering.
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