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New principals to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands of 1.2-1.8 THz; 2.5-3.4 THz, 5.0-5.2 THz and 6.1-6.4 THz, has been achieved from silicon crystals doped by phosphorus to ~1015 cm-3, under optical pumping by radiation of mid-infrared free electron laser at cryogenic temperatures...
New principals to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands of 1.2 - 1.8 THz; 2.5 - 3.4 THz, 4.6 - 5.8 THz and 6.1 - 6.4 THz, has been achieved from silicon crystals doped by phosphorus and antimony to around 1015 cm-3 under optical pumping by radiation of mid-infrared free electron laser...
Stimulated emission at terahertz frequencies has been obtained from multi-crystalline silicon doped by phosphor under optical excitation by a mid-infrared laser. The silicon samples consist of grains with a characteristic size distribution in the range from 50 to 500μm. The maximum operation temperature of the laser made from multi-crystalline silicon is 6K less than that of monocrystalline lasers...
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