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A novel backside-illuminated CMOS image sensor (BSI-CIS) scheme and process are developed and demonstrated. This innovative scheme can be realized without fusion oxide bonding and through-silicon via (TSV) fabrication. This wafer-level TSV-less BSI-CIS scheme includes transparent ultrathin silicon $(\sim\hbox{3.6} \ \mu\hbox{m})$ and uses several bonding technologies. The characterization and assessment...
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