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Two bonded structures, Cu/In bonding and Cu-Cu bonding with Ti passivation, were investigated for the application of 3D interconnects. For Cu/In bonding, the bonds were achieved at 170°C due to the isothermal solidification. The intermetallic compounds formed in the joint was Cu2In phase. For another case, Cu-Cu bonding with Ti passivation was successfully achieved at 180°C Application of Ti passivation...
Thin wafer/chip stacking with vertical interconnect by a Cu through-silicon via (TSV) and a Cu/Sn microjoint is one of the candidates for 3-D integration. The insertion loss of the two-chip stack was evaluated with different TSV pitches, microbump diameters, and chip thicknesses to realize the signal transmission effects in high-speed digital signaling via TSV and microjoint interconnection. In addition,...
In this paper, several material candidates for hybrid bonding technology in wafer-level 3D integration were investigated. Polymer materials, including BCB, SU-8, AL-Polymer, and polyimide (PI), were studied and then thermal-compression bonded between 150°C and 450°C. Characterization of bonded layer and evaluation of bond quality for these bonded wafers were investigated by Scanning Acoustic Tomograph...
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