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We investigate, for the first time, the impact of deep trench isolation on the total ionizing dose (TID) and single event upset (SEU) tolerance of advanced SiGe HBTs. We employ a combination of 63 MeV protons, 10 keV X-rays, and 36 MeV oxygen ion microbeam irradiation and compare a 3rd generation, high-performance (HP), deep-trench isolated, SiGe BiCMOS platform with its cost-performance (CP) variant...
The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated...
We investigate the response of SiGe HBTs exposed to high fluence and total dose levels of proton, neutron and gamma irradiation typically encountered in high energy physics experiments. The transistor radiation tolerance is evaluated via a comparison of excess base current, base current ideality, and current gain degradation. The results indicate that the observed device degradation may be dominated...
A comprehensive investigation of the performance dependencies of irradiated SiGe precision voltage reference circuits on (1) total ionizing dose (TID), (2) circuit topology, and (3) radiation source is presented. Two different bandgap voltage references were designed using a first-generation (50-GHz) SiGe BiCMOS technology platform, and subsequently exposed to X-rays at doses of 1080 krad(SiO2) and...
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