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This paper investigates the switching performances of two state-of-the-art half-bridge SiC MOSFET modules using a standard double pulse test methodology. A deliberate choice of the modules with the same voltage and current ratings, the same packaging, but different stray inductances and capacitances is made in order to give an insight into the influence of parasitics in the switching transients and...
This paper explains the importance of low inductive busbar for utilizing the fast switching feature of SiC modules. A 3D FEM model of the busbar is built using Ansys Q3D extractor. The simulation results give insight into the physical behaviour of the current flow which aids in the identification of the parts of the structure that must be considered coplanar. The simulated busbar inductance is compared...
In this paper, the switching performance of a six-pack SiC MOSFET module (CCS050M12CM2) is investigated experimentally using a standard double pulse test method. The upper three and the lower three MOSFETs of the CCS050M12CM2 are paralleled forming a half-bridge configuration. Moreover, the performance comparison of the CCS050M12CM2 is carried out with a pin to pin compatible Si IGBT module (FS75R12KT4_B15)...
This work claims that VO2, of interest currently for its metal-insulator phase transition properties, is also a ferroelectric material. Using a VO2 film sandwiched between two silicon dioxide layers, memory transistor structures with substantial and useful properties have been fabricated. Threshold voltage shifts are opposite of charge trapping phenomena and consistent with ferroelectric polarization...
The transformer winding capacitance, which is significant in high-voltage power supplies, is not gainfully utilized in an LCL-T resonant converter (RC). A simplified analysis presented in this paper predicts the severe degradation of output current regulation of an LCL-T RC due to transformer winding capacitance. The presence of winding capacitance, in fact, changes the third-order LCL-T resonant...
A primary source of common-mode (CM) electromagnetic interference (EMI) in high frequency switching converters is the parasitic capacitance between switching element and its heat sink. A passive method for cancellation of CM-EMI is analyzed in detail in this paper. Compared to with active cancellation techniques, it is much simpler and requires no additional switches or semiconductor components. The...
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