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This paper, presents the design and evaluation of a high efficiency, 30 W, two-stage, power amplifier for the 2.45 GHz ISM band. The designed amplifier targets an industrial application where precise control over the output power with good efficiency is necessary. A saturated output power of 44.7 dBm (30 Watts) was reached at a maximum drain efficiency of 67.8%. A full 5 dB control of the output power...
In this work a broad-band class E power amplifier (PA) is designed, manufactured and measured. 400 MHz bandwidth with a center frequency of 800 MHz was realized using a GaN HEMT device. A novel and easy circuit topology is proposed for broad-band bandpass filter with integrated output matching network. Different filter types are discussed, suitable topology is chosen and design equations are shown...
This work presents a Class F-1 power amplifier (PA) operating at 2.35 GHz. An output power of 40 W (46 dBm) was achieved with 10 dB gain. The maximum drain efficiency was measured to be 60.8% (PAE = 55.7 %). The power amplifier was implemented using GaN pHEMT. The realization of the optimum load resonator was designed by a microstrip resonator, for the first four harmonics. The resonator achieves...
This paper exhibits a 10 W class AB highly linear power amplifier (PA) for a frequency of 2.14 GHz using GaN HEMT. Power and linearity measurements and simulations illustrate stupendous correspondence. An output power of 11 W (41 dBm) with maximum drain efficiency (eta) of 72 % (PAE 56 %) is achieved. Linearity measurements were made with a frequency spacing of 100 KHz and output third-order and second-order...
Modern wireless communication standards, e.g. UMTS, are making use of modulation schemes, resulting in signals with high levels of peak-to-average power ratio (PAR). For example, the W-CDMA signal used in UMTS-standard has typical PAR levels above 6 dB. Conventional single-ended power amplifiers will result in low levels of average efficiency, if they were implemented in the transmitters of such communication...
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