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In very-high-spatial-resolution gamma-ray imaging applications, such as preclinical PET and SPECT, estimation of 3D interaction location inside the detector crystal can be used to minimize parallax error in the imaging system. In this work, we investigate the effect of bias voltage setting on depth-of-interaction (DOI) estimates for a semiconductor detector with a double-sided strip geometry. We first...
Electron and holes, produced by the absorption of a gamma-ray photon in the depletion region of a semiconductor detector, drift towards their respective electrodes under the influence of the electric field created by a bias potential difference applied between the contacts. Carrier transport has an important impact on the signals observed with compound semiconductors such as CdTe and CdZnTe, as these...
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