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Wet etching has been widely used in defect evaluation for Ga-face GaN and surface roughness for N-face GaN dodecagonal pyramids has been fabricated on laser-lift-off N-face GaN by hot phosphor acid etching. The dodecagonal pyramid shows twelve facets including six {20-2-3} and six {22-4-5} planes. From cross-sectional TEM image, it is shown that the pyramid corresponds to the top of the edge dislocation...
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