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Field effect (FE) a-Si:H solar cell promises an effective increase of conversion efficiency, respect to thin film p-i-n solar cells, by the use of an inversion layer at the cell surface obtained by FEs at amorphous silicon-insulator interface. In particular this structure avoids the presence of a p-doped window layer, which stems from the large absorption coefficient of a-Si:H. The window layer dramatically...
We present an experimental proof of the existence of charged defects related to boron diffusion at the p–i interface of single junction amorphous silicon solar cells. Two different test devices were manufactured substituting the intrinsic absorber layer of a standard p–i–n structure with a boron lightly doped layer or a microcompensated region. Presence of trap states lying around 0.3–0.4 eV above...
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