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This paper presents a GaN FET-based 1kW spwm inverter using a promising next generation power semiconductor. A GaN FET-based inverter has various problem expected to the different switching characteristic of an IGBT. So, a different switching characteristic of a GaN FET-based inverter instead of an IGBT-based inverter is compared and analyzed. The experimental results as well as a theoretical analysis...
This paper presents the analysis of problem as to when the GaN HEMT (Gallium nitride high electron mobility transistor) is applied to power conversion system. Compared to state-of-the-art super junction Si (Silicon) MOSFET (Metal oxide semiconductor field effect transistor), the FOM (Figure of merit) is much better because of heterojunction structure and wide band gap characteristics. However, designing...
This paper presents a design consideration of GaN FET-based resonant dc-dc converter, and the efficiency and ZVS characteristics of the resonant dc-dc converter based on GaN FET parameters are theoretically analyzed. To verify the validity of analysis, a 600W phase-shift full-bridge dc-dc converter is designed and implemented. The faulty turn-on and ZVS issue caused by GaN FET characteristics are...
This paper performs analysis and verification of active inrush current limiter (AICL) using the MOSFET for high-voltage DC power supply. To active this, the performance characteristic of AICL is analyzed comparatively with inrush current limiters using inductor, NTC thermistor, and relay, which have been used to protect the devices. And utilized of AICL when is applied to high-voltage DC power supply...
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