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Influence of indium doping (0.04-0.59%) on the qualities of GaAs epilayers on Si substrates by chemical beam epitaxy (CBE) has been studied. The thermally induced biaxial tensile stress in GaAs/Si doped with 0.29% of indium decreases to 2/3 of that in the layer without In-doping. The atomic force microscopy (AFM) average roughness (Ra) and root mean square (RMS) roughness values reached to as minimum...
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