The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In device simulation, fT is typically extracted at a single low frequency, e.g. 1 MHz, using gm/2piC. This is generally believed to give the same fT as traditional -20 dB/decade slope extrapolation of |h21| at high frequencies. A large discrepancy between the two fT extraction methods is observed, and the degree of discrepancy is found to depend on BGN and temperature. We explain the discrepancy as...
We investigate the modeling of bandgap narrowing (BGN) for consistent TCAD simulation of SiGe HBTs across wide temperature ranges. At present, such consistency can only be achieved near room temperature in commercial device simulators, because of the inconsistent accounting of the temperature dependence of the Fermi-Dirac statistics correction factor to the effective bandgap. A consistent Fermi-Dirac...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.