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The fabrication process of a hot-electron unipolar transistor with vertical transport based on InAs material is reported. Devices with an emitter width of 0.3 are fabricated and characterized. This submicrometer geometry allowed suppressing parasitic resistances and achieving high-current densities required for high-frequency operation. For the first time, for a hot-electron transistor,...
Room temperature homodyne and heterodyne THz detections are reported using an 1.55 mum-based THz source. The first experimental demonstration is a continuous wave terahertz homodyne detection, where THz emission is performed with an InGaAs/InP uni-travelling carrier photodiode monolithically integrated with a horn antenna. The coherent homodyne detection is achieved with an ion-irradiated InGaAs photoconductor...
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