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We report on intense terahertz emission from InAs/GaAs quantum dot layers grown by molecular beam epitaxy. The emission is attributed to absorption in the GaAs layer and a strong enhancement was observed from the quantum dot samples.
An AlN-based intersubband optical switch was fabricated with spot-size converter utilizing Si3N4 as a cladding layer. Intersubband absorption was observed at 1.48 mum. Absorption saturation by 5 dB was achieved with energy of 25 pJ.
An AlN-based intersubband optical switch was investigated. Narrow absorption spectrum and low insertion loss were obtained. Absorption saturation by 10 dB was achieved at a wavelength of 1.42 mum with an energy of 50 pJ.
We achieved low-power saturation of intersubband absorption at 1.5 mum with AIN-based AIN/GaN quantum wells. By optimizing the etching condition of waveguides, the saturation energy was reduced by a factor of 3.
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