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InP MZ modulator of sub 1-Vpp driving voltage with quasi-traveling-wave electrode structure and Logic IC of 90-nm CMOS process as its driver were developed. Their applicability was demonstrated through 10-Gb/s - 80-km transmission over full C-band.
This paper compares readout powers and operating frequencies among dual-port SRAMs: an 8T SRAM, 10T single-end SRAM, and 10T differential SRAM. The conventional 8T SRAM has the least transistor count, and is the most area efficient. However, the readout power becomes large and the cycle time increases due to peripheral circuits. The 10T single-end SRAM is our proposed SRAM, in which a dedicated inverter...
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