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Analog applications attract increasing interest for graphene field-effect transistors (GFETs). GFET with a cutoff frequency of up to 427 GHz has been reported; however, the device suffered from the large parasitic parameters and poor drain current saturation, which made their maximum oscillation frequency lower than the cutoff frequency. In this letter, quasi-free-standing bilayer graphene transistors...
E-Beam inspection (EBI) is widely applied as in-line defect monitoring tool for 14nm semiconductor manufacturing fabs. Failure mechanisms can be identified by cross-sectioning on the specific defect detected by EBI. Dark voltage contrast (DVC) and bright voltage contrast (BVC) are two typical types of e-Beam defects. In real practice, it is much easier to validate DVC signal due to its obvious detectability...
E-beam inspection has become more critical to rapid yield learning in semiconductor manufacturing, especially for 20nm-and-below nodes where defect dimensions shrink to levels below traditional bright field (BF) or dark field (DF) inspection capabilities. With increasing inspection capacity needs for high-volume manufacturing, multiple e-Beam tool sets are required for in-line monitoring. It is necessary...
Electron-beam inspection (eBI) of the contact (CA) module for silicon-on-insulator (SOI) technology is discussed in this paper. Voltage contrast is used to detect CA opens in the SRAM and both CA opens and shorts in special test structures. The inspection is performed after the tungsten chemical mechanical planarization (W CMP) step. In-line transmission electron microscope (TEM) samples at select...
An InGaAs/InAlAs/InP HEMT with sub-50nm EBL gate has been developed for sub-millimeter wave (SMMW) power amplifier (PA) applications. In this paper, we report the device performance including high drain current, high gain, high breakdown voltage and scalability to large gate periphery, which are essential for achieving high output power at these frequencies. Excellent yield, process uniformity and...
High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×1013 cm-2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density...
High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator-semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material...
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