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E-Beam inspection (EBI) is widely applied as in-line defect monitoring tool for 14nm semiconductor manufacturing fabs. Failure mechanisms can be identified by cross-sectioning on the specific defect detected by EBI. Dark voltage contrast (DVC) and bright voltage contrast (BVC) are two typical types of e-Beam defects. In real practice, it is much easier to validate DVC signal due to its obvious detectability...
E-Beam inspection (EBI) is widely applied as inline defect monitoring tool for 14nm semiconductor manufacturing fabs. Failure mechanisms can be identified by cross-sectioning on the specific defect detected by EBI. Dark voltage contrast (DVC) and bright voltage contrast (BVC) are two typical types of e-Beam defects. In real practice, it is much easier to validate DVC signal due to its obvious detectability...
Electron-beam inspection (eBI) of the contact (CA) module for silicon-on-insulator (SOI) technology is discussed in this paper. Voltage contrast is used to detect CA opens in the SRAM and both CA opens and shorts in special test structures. The inspection is performed after the tungsten chemical mechanical planarization (W CMP) step. In-line transmission electron microscope (TEM) samples at select...
Embedded DRAM will play a much larger part in IBM server microprocessors for new SOI technologies. Etch of a deep trench (DT) into the substrate, which is used to form the capacitor, is a complicated multi-step process. One of the key elements is etch of the buried oxide layer. Voltage contrast (VC) inspection is used to detect defective DTs and can differentiate between opens in the buried oxide...
An efficient practical reliability evaluation algorithm is presented for large-scale radial electrical distribution networks (EDN) using a section technique and taking into account the construction features of the EDN. The definition and properties of the section of a branch (SOB) concept, the component spreading method (CSM) for forming the SOB, and an algorithm for the reliability evaluation of...
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