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In this paper, we report the growth of epitaxial Cu3Ge thin films on c-plane sapphire substrate through domain matching epitaxy. Systematic study on the crystallinity of Cu3Ge thin films is carried out to correlate epitaxial characteristics with substrate lattice misfit. The crystallinity and epitaxy of the as-grown Cu3Ge thin films are improved considerably by controlling the parameters of pulsed...
Resistive switching devices are considered as one of the most promising candidates for the next generation memories and nonvolatile logic applications. In this paper, we report an anomalous resistive switching effect in BiFeO3 based hetero-structures. Different from conventional resistive switching devices made of metal oxides, no forming process is needed to obtain a stable resistive switching effect...
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