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Aluminum oxide thin films were prepared on glass and silicon substrates by RF plasma enhanced chemical vapor deposition (PECVD) using AlCl 3 , CO 2 and H 2 as gas sources. PECVD of aluminum oxide films has been formed by choosing appropriate substrate temperature, RF power and flow rate of reaction gas. The characteristics of films were investigated by X-ray diffraction, SEM,...
Transparent, amorphous and hard aluminum oxide films were deposited on glass at low temperatures (≤ 773 K) by r.f. plasma-enhanced chemical vapor deposition with AlCl 3 , H 2 and CO 2 as the reactants. The adhesion of films, a predominant factor in determining the performance and reliability of a coating-substrate system, evaluated by the critical load in scratch testing strongly...
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