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3-D monolithic integration (3DMI), also termed as sequential integration, is a potential technology for future gigascale circuits. Since the device layers are processed in sequential order, the size of the vertical contacts is similar to traditional contacts unlike in the case of parallel 3-D integration with through silicon vias (TSVs). Given the advantage of such small contacts, 3DMI enables manufacturing...
For the first time, Multi-VT UTBOX-FDSOI technology for low power applications is demonstrated. We highlight the effectiveness of back biasing for short devices in order to achieve ION current improvement by 45% for LVT options at an IOFF current of 23nA/μm and a leakage reduction by 2 decades for the HVT one. In addition, fully functional 0.299um2 bitcells with 290mV SNM at 1.1V and Vb=0V operation...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
We propose in the present paper root mean square (RMS) current rules to limit Joule heating in the back end of line (BEOL) of 65nm node circuits. These rules are based on a new analytical thermal resistance model previously determined for 130 and 90nm node BEOL. To confirm the validity of this model through technologies, Joule heating measurements at 110degC were performed on copper lines embedded...
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