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A silicon integrated RF magnetic field probe has been designed and microfabricated using CMOS-silicon-on-insulator (SOI) technology with a 0.15-mum design rule on a high-resistivity silicon substrate. The size of the coil window was 180times180 mum2. Coil and electrodes were separated by a 530-mum-long stripline so as to avoid stray voltage induction at the electrode portion. This probe was applied...
The paper demonstrates, for the first time, the multiple-point concurrent measurement of the magnetic field with aligned active probes using electrical switching scan. Measurement results show a significant improvement in the performance of the active probe, which overtakes that of the conventional passive probe.
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