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This paper presents a sub-harmonic mixer at 340 GHz based on anti-parallel Schottky diodes (SBDs). Intrinsic resonances in low-pass hammer-head filter have been adopted to enhance the isolation for different harmonic components, while greatly minimizing the transmission loss. The application of new DC grounding structure, impedance matching structure, and suspended micro-strip mitigates the negative...
The I-V characteristics and S-parameters of AlGaN/GaN on silicon Schottky diodes are investigated. A compact circuit model is constructed for RF application. Simulated results are compared with measured results using AlGaN/GaN on Silicon diodes as RF switches. The simulated and measured results illustrated good agreement within a wide frequency range. The output power from the switch is also measured...
This paper presents the low frequency noise investigation of the AlGaN/GaN on silicon Schottky diode. The noise power spectral density of various sizes of the AlGaN/GaN Schottky diodes under different biasing voltages has been measured. The 1/f behaviour is observed before the corner frequency and the effect of the multi-finger contact is also been determined. With increasing number of fingers, higher...
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