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We prepared [Pt/(Co, Cu)] multilayers with a very thin (i.e., 0.2 nm thick) Pt layer and a thicker (i.e., 0.4, 0.5, or 0.6 nm thick) (Co, Cu) layer and investigated the effects of the Cu content in the (Co, Cu) layer and the postannealing temperature on the magnetic properties of the multilayers. The samples in the as-deposited state and those annealed up to 500 °C for 1 h all exhibited perpendicular...
Magnetic tunnel junctions with perpendicularly magnetized elements are being considered for next-generation, non-volatile, magnetic random access memory (MRAM) elements due to their large thermal stability, low Gilbert damping constant α, and very low critical current density $J_c$ required for spin-transfer-torque (STT), current-induced, magnetization switching. Here we study, by means of static...
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