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This paper presents a fully integrated low power, low noise 400MHz fractional-N with direct modulation using 0.13μm CMOS process. The synthesizer provide low phase-noise, covering 410MHz to 490MHz using multiband low gain VCO, Direct modulation that supports three data rate viz, 4.8Kbps, 2.4Kbps and 1.2Kbps GFSK and GMSK. The measurement result show the phase-noise of is −101dBc/Hz at 10KHz offset...
This paper presents a fully integrated low power, low noise 900MHz fractional-N synthesizer using 0.13um CMOS process. The synthesizer exhibits low phase-noise, covering 860MHz to 1.03GHz using multiband low gain VCO. When measured at 930 MHz, the phase-noise is −90dBc/Hz, −92dBc/Hz and −116dBc/Hz at offsets of 1kHz, 100kHz, 1MHz respectively. The active die area is 0.55mm × 0.8mm. The chip operates...
A 20-GHz voltage-controlled oscillator (VCO) for phase-locked loop (PLL) synthesizer is presented in this paper. The VCO and PLL synthesizer have been implemented using only CMOS devices of a 0.13-μπι SiGe BiCMOS technology with the chip area of 0.22 mm2 and 0.48 mm2, respectively. The measured tuning range of the VCO is 2.21 GHz from 19.9 to 22.11 GHz; the PLL synthesizer can generate output frequencies...
A fully-integrated fractional-N synthesizer (FNS) is designed and implemented, for a single-chip UHF transceiver, using 1P6M 0.18-μm RF CMOS process. The synthesizer provides very low phase-noise and extremely low reference spur RF source covering 880MHz to 1260MHz, incorporating on-chip active loop-filter and dual-stage charge-pump circuits. The measured phase-noise is -116dBc/Hz at 200KHz offset...
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