The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A novel architecture for the reduction of both dynamic and static power consumption of static random access memories (SRAM) is presented. The scheme is based on the segmented virtual grounding (SVGND) of the SRAM cells. Substantial leakage reduction is achieved by increasing the threshold voltage of the cell transistors through body effect. The write and read energy consumptions are reduced significantly...
The paper discusses the concept of dynamic data stability in the SRAM cells. It is shown that the criteria for the absolute static data stability in an SRAM cell is a sub-set of its dynamic data stability. Hence, test methods that are based on dynamic stress of the cell have limited success in discovering the defective cells. Hammer test, for example, fails to discover the faults in an SRAM cell when...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.