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The evolution of microstructure in Cu/In–48Sn/Cu solder bump interconnects at a current density of 0.7 × 104 A/cm2 and ambient temperature of 55 °C has been investigated. During electromigration, tin (Sn) atoms migrated from cathode to anode, while indium (In) atoms migrated from anode to cathode. As a result, the segregation of the Sn-rich phase and the In-rich phase occurred. A Sn-rich layer and...
The microstructural evolution and interfacial reactions of the eutectic In-48Sn solder interconnect with Cu and Au/Ni/Cu pads, under current stressing of 0.7×104 A/cm2 at room temperature, have been investigated. The Ni metallization eliminated the current density inside the solder bump region, which is helpful to improve the electromigration reliability. During electromigration, Sn migrated to anode,...
The thermomigration of eutectic tin-lead flip chip solder joints under ambient temperatures of 20 degC, 100degC and 150degC was investigated in terms of microstructural evolution. No significant thermomigration occurred after 100 h at 20degC and at 100degC. Only microstructural coarsening was observed in solder joints for these cases. However, Pb thermomigration and phase segregation were observed...
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