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250GHz SiGe(C) Heterojunction Bipolar Transistor (HBT) is a high performance device with low noise figure and high transconductance particularly required in power RF circuits. Applications are various: 77GHz automotive radars, non invasive imaging in airport for example. In order to achieve such specification, aggressive design leads to use of HBT at high collector current and sometime with VCE bias...
Reliability performances of fully self aligned heterojunction bipolar transistors were investigated under high current and voltage stress conditions. We point out in this paper that generation-recombination traps induced by reverse bias stress can be repaired by forward bias. This is possible thanks to high enough device temperature (strong self-heating condition). Low frequency noise measurements...
High performance bipolar transistors were investigated under both reverse and forward stress conditions. Although classical hot-carrier induced degradation has been shown in reverse mode, the results obtained under forward conditions were not in line with those reported for previous device generation. Indeed, the coupled approach using low frequency noise spectra measurements and reliability studies...
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