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We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at VGS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs...
The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact together with a dielectric current confinement layer and oxidized AlInN/GaN distributed Bragg reflectors.
In this presentation, the main drawbacks of GaN based microcavities (MCs) are first pointed out. Achieving high quality factor MCs is a tough task because of intrinsic material properties like the lattice mismatch existing between GaN and AlN. To circumvent this issue, a different strategy based on lattice-matched AlInN alloy is adopted. Although difficult to grow, AlInN epitaxial layers can be successfully...
Strongly-coupled GaN semiconductor microcavities exhibit polariton effects at room temperature. We show sub-mW thresholds for coherent polariton lasing at 300 K, and discuss polarization evidence for the formation of Bose-Einstein polariton condensates.
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