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We report 4ps and 8ps pulse generation from a two-section monolithic InGaN/GaN laser by hybrid and passive mode-locking, respectively. Pulse trains at a repetition rate of 28.6GHz and an emission wavelength of 422nm are generated.
The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact together with a dielectric current confinement layer and oxidized AlInN/GaN distributed Bragg reflectors.
In this presentation, the main drawbacks of GaN based microcavities (MCs) are first pointed out. Achieving high quality factor MCs is a tough task because of intrinsic material properties like the lattice mismatch existing between GaN and AlN. To circumvent this issue, a different strategy based on lattice-matched AlInN alloy is adopted. Although difficult to grow, AlInN epitaxial layers can be successfully...
A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice- matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93...
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